MMBT3906-7-F 数据手册
其他文档
未找到其他文档！
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Diodes Incorporated MMBT3906-7-F
- Transistor Type: PNP
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 200mA
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 250MHz
- DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
- Collector Cut-Off Current (Icbo): -
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@50mA,5mA
- Package: SOT-23
- Manufacturer: Diodes Incorporated